Manufacturer Part Number
NDD02N60Z-1G
Manufacturer
onsemi
Introduction
High-voltage, N-channel power MOSFET
Product Features and Performance
Voltage rating up to 600V
Continuous drain current up to 2.2A
Low on-resistance down to 4.8 ohms
High switching speed
Wide operating temperature range of -55°C to 150°C
Product Advantages
Reliable and robust performance
Efficient power conversion
Suitable for high-voltage applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Max Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 4.8 ohms @ 1A, 10V
Continuous Drain Current (Id): 2.2A @ 25°C
Input Capacitance (Ciss): 274pF @ 25V
Power Dissipation (Ptot): 57W @ Tc
Quality and Safety Features
Meets industrial-grade quality standards
Robust design for reliable operation
Suitable for safety-critical applications
Compatibility
Compatible with various high-voltage, high-power circuit designs
Application Areas
Power supplies
Motor drives
Lighting ballasts
Switched-mode power supplies
Industrial and consumer electronics
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement and upgrade options available
Several Key Reasons to Choose This Product
High-voltage and high-current capability
Low on-resistance for efficient power conversion
Wide operating temperature range for versatile applications
Robust design for reliable performance
Compatibility with various high-power circuit designs
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