NDD02N60ZT4G - onsemi

Manufacturer Part Number

NDD02N60ZT4G

Manufacturer

onsemi

Introduction

High-voltage, N-channel power MOSFET with low on-resistance and high switching speed, suitable for a wide range of power conversion and control applications.

Product Features and Performance

High voltage rating of 600V

Very low on-resistance of 4.8Ω at 1A, 10V

Fast switching speed with low gate charge of 16nC at 10V

High continuous drain current of 2.2A at 25°C

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent power efficiency due to low on-resistance

Reliable high-voltage operation

Fast and efficient switching characteristics

Suitable for high-power applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 600V

Gate-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 4.8Ω at 1A, 10V

Continuous Drain Current (Id): 2.2A at 25°C

Input Capacitance (Ciss): 325pF at 25V

Power Dissipation (Pd): 57W at Tc

Quality and Safety Features

Designed and manufactured to high quality standards

Robust MOSFET structure for reliable operation

Thermal protection for safe operation

Compatibility

Suitable for a wide range of power conversion and control applications

Drop-in replacement for similar high-voltage, low on-resistance MOSFET devices

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Industrial and automotive electronics

Product Lifecycle

This product is currently in active production and there are no plans for discontinuation.

Replacements and upgrades may become available in the future as technology evolves.

Key Reasons to Choose This Product

Excellent power efficiency due to low on-resistance

Reliable high-voltage operation up to 600V

Fast and efficient switching characteristics for high-speed applications

Wide operating temperature range for use in demanding environments

Proven quality and reliability from a trusted manufacturer, onsemi