Manufacturer Part Number
NDD03N50ZT4G
Manufacturer
onsemi
Introduction
The NDD03N50ZT4G is a high-voltage, N-channel power MOSFET transistor from onsemi. It is designed for use in various power conversion and switching applications.
Product Features and Performance
High-voltage operation up to 500V
Low on-resistance of 3.3Ω at 1.15A, 10V
Continuous drain current of 2.6A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching characteristics with low gate charge of 16nC at 10V
Compact DPAK surface mount package
Product Advantages
Excellent power handling and efficiency
Reliable high-voltage operation
Compact and space-saving design
Suitable for a variety of power conversion applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 3.3Ω at 1.15A, 10V
Continuous Drain Current (Id): 2.6A at 25°C
Input Capacitance (Ciss): 329pF at 25V
Power Dissipation (Pd): 58W at Tc
Quality and Safety Features
Compliant with RoHS and other environmental regulations
Robust design for reliable operation
Rigorous testing and quality control measures
Compatibility
Compatible with a wide range of power supply and control circuits
Suitable for use in various power conversion and switching applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Excellent power handling and efficiency for high-voltage applications
Compact and space-saving DPAK package
Reliable and robust design for long-term operation
Suitable for a variety of power conversion and switching applications
Backed by onsemi's reputation for quality and innovation