Manufacturer Part Number
NDD02N40-1G
Manufacturer
onsemi
Introduction
The NDD02N40-1G is a discrete N-channel MOSFET transistor from onsemi.
Product Features and Performance
400V Drain-Source Voltage
7A Continuous Drain Current
5Ω On-State Resistance
High Temperature Operation up to 150°C
Low Input Capacitance of 121pF
39W Power Dissipation Capability
Product Advantages
High voltage and current handling capability
Low on-state resistance for efficient power delivery
Wide temperature range for diverse applications
Compact through-hole package design
Key Technical Parameters
Drain-Source Voltage (Vdss): 400V
Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 5.5Ω
Continuous Drain Current (Id): 1.7A
Input Capacitance (Ciss): 121pF
Power Dissipation (Pd): 39W
Quality and Safety Features
Robust metal oxide semiconductor field-effect transistor (MOSFET) technology
UL recognized component
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Power supplies
Motor drives
Switching regulators
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and widely available
No immediate plans for discontinuation
Potential upgrades or replacements may become available in the future
Key Reasons to Choose This Product
High voltage and current handling capability for demanding applications
Low on-state resistance for efficient power delivery
Wide temperature range for reliable operation in diverse environments
Compact through-hole package design for easy integration
Robust MOSFET technology for quality and safety