Manufacturer Part Number
NDD04N50ZT4G
Manufacturer
onsemi
Introduction
This is an N-channel enhancement-mode power MOSFET from onsemi, designed for high-voltage, high-power switching applications.
Product Features and Performance
500V drain-source voltage rating
3A continuous drain current at 25°C
7Ohm maximum on-resistance at 1.5A, 10V
308pF maximum input capacitance at 25V
61W maximum power dissipation at Tc
-55°C to 150°C operating temperature range
Product Advantages
High voltage and power handling capability
Low on-resistance for efficient switching
Compact DPAK surface-mount package
Wide operating temperature range
Key Technical Parameters
Vdss: 500V
Vgs(max): ±30V
Rds(on)(max): 2.7Ohm @ 1.5A, 10V
Id(cont): 3A @ 25°C
Ciss(max): 308pF @ 25V
Pd(max): 61W @ Tc
Quality and Safety Features
Manufactured using robust MOSFET technology
Designed for reliable performance and safety
Compatibility
Suitable for high-voltage, high-power switching applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial controls
Lighting systems
Product Lifecycle
This product is currently in active production and availability.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
High voltage and power handling capabilities
Low on-resistance for efficient switching
Compact and thermally efficient DPAK package
Wide operating temperature range
Reliable performance and safety features
Compatibility with a variety of high-power applications