NDD05N50ZT4G - onsemi

Manufacturer Part Number

NDD05N50ZT4G

Manufacturer

onsemi

Introduction

This product is a high-voltage, N-channel MOSFET transistor suitable for a variety of power switching and control applications.

Product Features and Performance

Drain to Source Voltage (Vdss) of 500 V

Vgs (Max) of ±30 V

Low on-resistance (Rds(on)) of 1.5 Ω @ 2.2 A, 10 V

Continuous Drain Current (Id) of 4.7 A at 25°C

Low input capacitance (Ciss) of 530 pF at 25 V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent power handling capabilities

High voltage and current ratings

Low on-resistance for efficient power switching

Compact DPAK surface mount package

Key Technical Parameters

MOSFET Technology

N-Channel FET Type

Vgs(th) (Max) of 4.5 V @ 50 A

Gate Charge (Qg) (Max) of 18.5 nC @ 10 V

Power Dissipation (Max) of 83 W at Tc

Quality and Safety Features

Designed and manufactured to high quality standards

Suitable for use in safety-critical applications

Compatibility

This MOSFET is designed to be compatible with a wide range of power supply and motor control circuits.

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Solenoid drivers

Industrial control equipment

Product Lifecycle

This product is an active and widely used MOSFET. No information is available on its discontinuation or replacement.

Key Reasons to Choose This Product

Excellent power handling and efficiency

Compact and space-saving DPAK package

Wide operating temperature range

Proven reliability and performance in a variety of applications