NDD60N360U1T4G - onsemi

Manufacturer Part Number

NDD60N360U1T4G

Manufacturer

onsemi

Introduction

The NDD60N360U1T4G is a high-performance N-channel MOSFET transistor from onsemi, designed for a wide range of power electronics applications.

Product Features and Performance

600V drain-to-source voltage (Vdss)

360mΩ maximum on-resistance (Rds(on)) at 5.5A and 10V gate-to-source voltage

11A continuous drain current (Id) at 25°C

790pF maximum input capacitance (Ciss) at 50V

114W maximum power dissipation (Tc)

Operating temperature range of -55°C to 150°C

Product Advantages

High voltage and current handling capabilities

Low on-resistance for improved efficiency

Compact DPAK surface mount package

Wide operating temperature range

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Gate-to-Source Voltage (Vgs): ±25V

On-Resistance (Rds(on)): 360mΩ @ 5.5A, 10V

Continuous Drain Current (Id): 11A @ 25°C

Input Capacitance (Ciss): 790pF @ 50V

Power Dissipation (Max): 114W @ Tc

Quality and Safety Features

Robust MOSFET design for high reliability

Compliant with relevant safety and regulatory standards

Compatibility

Suitable for a wide range of power electronics applications, including power supplies, motor drives, and industrial equipment.

Application Areas

Power electronics

Motor control

Industrial equipment

Household appliances

Product Lifecycle

Current product, no indication of discontinuation

Replacement or upgrade options may be available from onsemi

Key Reasons to Choose This Product

High voltage and current capabilities

Low on-resistance for improved efficiency

Compact surface mount package

Wide operating temperature range

Robust design for high reliability

Compatibility with various power electronics applications