Manufacturer Part Number
NDD04N60Z-1G
Manufacturer
onsemi
Introduction
This is a high-performance, N-channel MOSFET transistor from onsemi, designed for a wide range of power conversion and switching applications.
Product Features and Performance
600V drain-to-source voltage rating
1A continuous drain current at 25°C
Very low on-resistance of 2 ohms at 2A, 10V
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 640pF at 25V
Maximum power dissipation of 83W at Tc
Product Advantages
Excellent voltage and current handling capabilities
Ultra-low on-resistance for high efficiency
Wide temperature range for versatile applications
Compact TO-251-3 package with short leads
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 2 ohms @ 2A, 10V
Continuous Drain Current (Id): 4.1A at 25°C
Input Capacitance (Ciss): 640pF at 25V
Power Dissipation (Tc): 83W
Quality and Safety Features
Robust metal-oxide semiconductor design
Suitable for high-voltage, high-power applications
Compliance with relevant safety standards
Compatibility
Compatible with a wide range of power electronics and power conversion systems
Application Areas
Switch-mode power supplies
Inverters and motor drives
Lighting ballasts
Home appliances
Industrial automation and control systems
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent voltage and current handling capabilities for high-power applications
Ultra-low on-resistance for improved efficiency and reduced power losses
Wide operating temperature range for versatile use in different environments
Compact and reliable TO-251-3 package with short leads for easy integration
Robust design and compliance with relevant safety standards for reliable performance
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