NDD04N60Z-1G - onsemi

Manufacturer Part Number

NDD04N60Z-1G

Manufacturer

onsemi

Introduction

This is a high-performance, N-channel MOSFET transistor from onsemi, designed for a wide range of power conversion and switching applications.

Product Features and Performance

600V drain-to-source voltage rating

1A continuous drain current at 25°C

Very low on-resistance of 2 ohms at 2A, 10V

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 640pF at 25V

Maximum power dissipation of 83W at Tc

Product Advantages

Excellent voltage and current handling capabilities

Ultra-low on-resistance for high efficiency

Wide temperature range for versatile applications

Compact TO-251-3 package with short leads

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Gate-to-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 2 ohms @ 2A, 10V

Continuous Drain Current (Id): 4.1A at 25°C

Input Capacitance (Ciss): 640pF at 25V

Power Dissipation (Tc): 83W

Quality and Safety Features

Robust metal-oxide semiconductor design

Suitable for high-voltage, high-power applications

Compliance with relevant safety standards

Compatibility

Compatible with a wide range of power electronics and power conversion systems

Application Areas

Switch-mode power supplies

Inverters and motor drives

Lighting ballasts

Home appliances

Industrial automation and control systems

Product Lifecycle

This product is currently available and not nearing discontinuation

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent voltage and current handling capabilities for high-power applications

Ultra-low on-resistance for improved efficiency and reduced power losses

Wide operating temperature range for versatile use in different environments

Compact and reliable TO-251-3 package with short leads for easy integration

Robust design and compliance with relevant safety standards for reliable performance