Manufacturer Part Number
NDD04N60ZT4G
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET transistor suitable for a variety of power switching applications.
Product Features and Performance
600V Drain-Source Voltage
1A Continuous Drain Current at 25°C
Low On-Resistance of 2Ω @ 2A, 10V
Wide Operating Temperature Range of -55°C to 150°C
Fast Switching Characteristics
Low Gate Charge of 29nC @ 10V
Product Advantages
Excellent power handling capability
High efficiency and low power loss
Reliable and robust design
Suitable for a wide range of applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 2Ω @ 2A, 10V
Continuous Drain Current (Id): 4.1A @ 25°C
Input Capacitance (Ciss): 640pF @ 25V
Power Dissipation: 83W @ Tc
Quality and Safety Features
Robust and reliable MOSFET design
Compliant with safety standards
Extensive testing and quality control measures
Compatibility
Suitable for a wide range of power switching applications
Can be used in various electronic devices and systems
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Industrial and consumer electronics
Product Lifecycle
The NDD04N60ZT4G is an active and widely available product
No immediate discontinuation or replacement plans
Key Reasons to Choose This Product
High power handling and efficiency
Low on-resistance for reduced power losses
Wide operating temperature range for versatile applications
Fast switching characteristics for high-speed power conversion
Reliable and robust design for long-term performance
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