Manufacturer Part Number
FJP13007H2TU
Manufacturer
onsemi
Introduction
High-voltage, high-power NPN silicon transistor suitable for switching and amplifier applications.
Product Features and Performance
High voltage capability up to 400V
High power handling up to 80W
High current capacity up to 8A
High current gain (hFE) of 26 minimum
High-frequency operation up to 4MHz
TO-220-3 package for efficient heat dissipation
Product Advantages
Reliable and robust design
Suitable for a wide range of power applications
Excellent performance characteristics
Industry-standard package for easy integration
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 400V
Current Collector (Ic) (Max): 8A
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 2A, 5V
Frequency Transition: 4MHz
Quality and Safety Features
RoHS3 compliant
Tested and qualified for reliable performance
Designed to meet industry safety standards
Compatibility
Industry-standard TO-220-3 package for universal compatibility
Application Areas
Switching and amplifier circuits
Power supplies
Motor control
Industrial and consumer electronics
Product Lifecycle
Currently in production
No plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High voltage and power handling capabilities
Excellent current gain and high-frequency performance
Reliable and robust design
Industry-standard package for easy integration
Compliance with RoHS regulations
Suitable for a wide range of power applications
FJP13007H2TUJ13007-2AMI Semiconductor/onsemi