FJP13009TU - onsemi

Manufacturer Part Number

FJP13009TU

Manufacturer

onsemi

Introduction

The FJP13009TU is a high-power, NPN bipolar junction transistor (BJT) designed for a variety of industrial and consumer electronics applications.

Product Features and Performance

High power handling capacity of up to 100 watts

High collector-emitter breakdown voltage of 400V

High collector current of up to 12A

Low collector-emitter saturation voltage of 3V at 12A collector current

High DC current gain of at least 8 at 5A collector current

Transition frequency of 4MHz

Product Advantages

Robust and reliable performance

Efficient power handling

Suitable for high-voltage, high-current applications

Versatile usage across industrial and consumer electronics

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 400V

Collector Current (Max): 12A

Power Dissipation (Max): 100W

DC Current Gain (Min): 8 @ 5A, 5V

Transition Frequency: 4MHz

Quality and Safety Features

RoHS3 compliant

Housed in a reliable, industry-standard TO-220-3 package

Compatibility

Suitable for a wide range of industrial and consumer electronics applications requiring high-power, high-voltage transistors

Application Areas

Power supplies

Motor drives

Inverters

Amplifiers

Industrial control systems

Product Lifecycle

The FJP13009TU is an actively supported product in onsemi's portfolio. There are no indications of it being nearing discontinuation, and suitable replacement or upgrade options are available.

Key Reasons to Choose This Product

Robust and reliable performance for high-power, high-voltage applications

Efficient power handling and low saturation voltage for improved energy efficiency

Versatile usage across a wide range of industrial and consumer electronics applications

Backed by onsemi's reputation for quality and customer support