Manufacturer Part Number
FJP13009H2TU
Manufacturer
Fairchild (onsemi)
Introduction
High-power NPN bipolar junction transistor (BJT)
Suitable for various power electronics applications
Product Features and Performance
High breakdown voltage (400V)
High collector current capability (12A)
Low VCE(sat) (3V @ 12A)
High DC current gain (15 @ 5A, 5V)
Wide operating temperature range (up to 150°C)
Power handling capability up to 100W
Product Advantages
Robust design for high-power applications
Reliable performance under high-stress conditions
Versatile usage in various power electronics circuits
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 400V
Current Collector (Ic) (Max): 12A
VCE Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
Frequency Transition: 4MHz
Quality and Safety Features
Strict quality control and testing
Compliance with industry standards
Designed for reliable and safe operation
Compatibility
Suitable for various power electronics applications
Can be used as a replacement or upgrade in existing designs
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Industrial controls
Welding equipment
Product Lifecycle
Currently in active production
No immediate plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
High-performance and reliable power handling capabilities
Robust design for harsh operating environments
Wide range of applications in power electronics
Proven track record of reliable and safe operation
Availability of replacement and upgrade options
FJP13009H2TUJ13009-2AMI Semiconductor/onsemi