FJP13009H2 - onsemi

Manufacturer Part Number

FJP13009H2

Manufacturer

onsemi

Introduction

This product is a discrete semiconductor transistor, specifically a bipolar junction transistor (BJT) in a single configuration.

Product Features and Performance

High power handling capability up to 100W

Voltage rating up to 400V collector-emitter breakdown voltage

High current rating up to 12A collector current

Low saturation voltage of 3V at 12A collector current

Frequency transition of 4MHz

Wide operating temperature range up to 150°C

Product Advantages

Robust design for high power applications

Excellent voltage and current handling capabilities

Fast switching performance

Reliable operation in high temperature environments

Key Technical Parameters

Power Rating: 100W

Collector-Emitter Breakdown Voltage: 400V

Collector Current: 12A

Collector-Emitter Saturation Voltage: 3V @ 12A

DC Current Gain: 15 @ 5A, 5V

Transition Frequency: 4MHz

Operating Temperature: 150°C (TJ)

Quality and Safety Features

Complies with relevant industry standards for safety and reliability

Rigorous quality control and testing during manufacturing

Compatibility

Designed for through-hole mounting in TO-220-3 package

Suitable for a wide range of power electronics and industrial applications

Application Areas

Power amplifiers

Motor drives

Switching power supplies

Industrial control systems

Automotive electronics

Product Lifecycle

This product is currently in active production and readily available

Replacements or upgrades may be available in the future as technology advances

Several Key Reasons to Choose This Product

Exceptional power handling and voltage/current capabilities

Reliable high-temperature operation

Fast switching performance for efficient power conversion

Robust and well-tested design for industrial and automotive applications

Proven track record of quality and reliability from onsemi