Manufacturer Part Number
FJP13009H2TU
Manufacturer
onsemi
Introduction
The FJP13009H2TU is a high-voltage, high-power NPN bipolar junction transistor (BJT) from onsemi.
Product Features and Performance
High voltage capability up to 400V
High power handling up to 100W
High current rating up to 12A
High gain (hFE) of 15 at 5A, 5V
High frequency transition of 4MHz
Through-hole mounting in a TO-220-3 package
Product Advantages
Suitable for high-power switching and amplifier applications
Robust design for reliable operation
Compact and space-efficient package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 400V
Collector Current (IC): 12A
Power Dissipation (PD): 100W
DC Current Gain (hFE): 15 @ 5A, 5V
Transition Frequency (fT): 4MHz
Quality and Safety Features
RoHS3 compliant
Reliable through-hole mounting
Compatibility
Widely compatible with various high-power electronic circuits and systems
Application Areas
High-power switching applications
Power amplifiers
Industrial control systems
Automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available from onsemi
Key Reasons to Choose This Product
High voltage and power capability
Excellent performance characteristics
Robust and reliable design
Compact and space-efficient package
RoHS3 compliance for environmental safety
FJP13009H1TUAMI Semiconductor/onsemi
FJP3303H1TUFairchild (onsemi)