FJP13009TU - Fairchild Semiconductor

Manufacturer Part Number

FJP13009TU

Manufacturer

Fairchild (onsemi)

Introduction

High-power, high-voltage NPN bipolar junction transistor (BJT) suitable for various power electronics applications.

Product Features and Performance

High power handling capacity up to 100 W

High voltage rating up to 400 V collector-emitter breakdown voltage

High current capability up to 12 A collector current

High DC current gain of 8 or more at 5 A, 5 V

Wide operating temperature range up to 150°C

Product Advantages

Robust and reliable performance

Suitable for high-power, high-voltage applications

Efficient power conversion and control

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 400 V

Collector Current (Max): 12 A

Collector-Emitter Saturation Voltage: 3 V @ 3 A, 12 A

DC Current Gain: 8 or more @ 5 A, 5 V

Transition Frequency: 4 MHz

Quality and Safety Features

Designed and manufactured to high quality standards

Meets relevant safety and regulatory requirements

Compatibility

Through-hole mounting in TO-220-3 package

Suitable for various power electronics applications

Application Areas

Power supplies

Motor drives

Inverters

Switching regulators

Industrial and consumer electronics

Product Lifecycle

Currently in active production

Replacement or upgrade options may be available in the future

Several Key Reasons to Choose This Product

High power and voltage handling capabilities

Robust and reliable performance

Efficient power conversion and control

Suitable for a wide range of power electronics applications

Meets quality and safety standards