Manufacturer Part Number
FJP13007H1
Manufacturer
onsemi
Introduction
High-power NPN bipolar junction transistor (BJT) with high breakdown voltage and high current capability.
Product Features and Performance
Capable of handling high power up to 80 watts
High collector-emitter breakdown voltage of 400V
High collector current rating of 8A
High DC current gain (hFE) of at least 15 at 2A, 5V
Transition frequency of 4MHz
Product Advantages
Suitable for high-power switching and amplifier applications
Robust design with high reliability
Compact TO-220-3 package for efficient heat dissipation
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 400V
Collector Current (IC): 8A
Power Dissipation (Pd): 80W
DC Current Gain (hFE): Minimum of 15 at 2A, 5V
Transition Frequency (fT): 4MHz
Quality and Safety Features
Designed and manufactured to high quality standards
Meets relevant safety and regulatory requirements
Compatibility
Through-hole mounting in the industry-standard TO-220-3 package
Application Areas
High-power switching circuits
Power amplifiers
Power supplies
Industrial control systems
Product Lifecycle
This product is currently in active production and available for purchase
Replacement or upgraded models may become available in the future as technology evolves
Several Key Reasons to Choose This Product
Ability to handle high power up to 80 watts
Robust design with high breakdown voltage and current capability
Suitable for a wide range of high-power switching and amplifier applications
Compact and efficient TO-220-3 package for easy integration
Manufactured to high quality and safety standards