FJP13007H1 - onsemi

Manufacturer Part Number

FJP13007H1

Manufacturer

onsemi

Introduction

High-power NPN bipolar junction transistor (BJT) with high breakdown voltage and high current capability.

Product Features and Performance

Capable of handling high power up to 80 watts

High collector-emitter breakdown voltage of 400V

High collector current rating of 8A

High DC current gain (hFE) of at least 15 at 2A, 5V

Transition frequency of 4MHz

Product Advantages

Suitable for high-power switching and amplifier applications

Robust design with high reliability

Compact TO-220-3 package for efficient heat dissipation

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 400V

Collector Current (IC): 8A

Power Dissipation (Pd): 80W

DC Current Gain (hFE): Minimum of 15 at 2A, 5V

Transition Frequency (fT): 4MHz

Quality and Safety Features

Designed and manufactured to high quality standards

Meets relevant safety and regulatory requirements

Compatibility

Through-hole mounting in the industry-standard TO-220-3 package

Application Areas

High-power switching circuits

Power amplifiers

Power supplies

Industrial control systems

Product Lifecycle

This product is currently in active production and available for purchase

Replacement or upgraded models may become available in the future as technology evolves

Several Key Reasons to Choose This Product

Ability to handle high power up to 80 watts

Robust design with high breakdown voltage and current capability

Suitable for a wide range of high-power switching and amplifier applications

Compact and efficient TO-220-3 package for easy integration

Manufactured to high quality and safety standards