Manufacturer Part Number
FJP13007
Manufacturer
onsemi
Introduction
High-power NPN silicon transistor for general-purpose applications
Product Features and Performance
Capable of handling up to 80W of power
Operates at high voltages up to 400V
Supports collector currents up to 8A
Provides a guaranteed minimum DC current gain (hFE) of 8 at 2A and 5V
Achieves a transition frequency of 4MHz
Product Advantages
High power handling capabilities
Wide operating voltage range
High current capacity
Reliable performance
Key Technical Parameters
Power Rating: 80W
Collector-Emitter Breakdown Voltage: 400V
Collector Current (Max): 8A
DC Current Gain (hFE): Minimum of 8 at 2A and 5V
Transition Frequency: 4MHz
Quality and Safety Features
Designed and manufactured to high quality standards
Robust TO-220-3 package for secure mounting and heat dissipation
Compatibility
Compatible with a variety of electronic circuits and systems
Application Areas
Suitable for general-purpose high-power amplifier and switching applications
Can be used in power supplies, motor controls, and industrial equipment
Product Lifecycle
This product is currently in active production and availability
Replacement or upgraded options may become available in the future
Key Reasons to Choose This Product
Excellent power handling capabilities
Wide operating voltage range
High current capacity
Reliable and consistent performance
Cost-effective solution for high-power applications
FJP13009H1TUAMI Semiconductor/onsemi