Manufacturer Part Number
FJP13007H1TU
Manufacturer
onsemi
Introduction
High-voltage, high-power NPN bipolar junction transistor (BJT)
Product Features and Performance
Designed for high-voltage, high-power applications
High voltage rating up to 400V
High current handling capability up to 8A
High power dissipation up to 80W
High current gain (hFE) of 15 min. at 2A, 5V
High transition frequency of 4MHz
Product Advantages
Robust and reliable performance
Suitable for a wide range of power electronics applications
Efficient heat dissipation due to TO-220-3 package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 400V
Collector Current (IC): 8A
Power Dissipation (PD): 80W
Current Gain (hFE): 15 min. at 2A, 5V
Transition Frequency (fT): 4MHz
Quality and Safety Features
Complies with relevant safety and quality standards
Stringent manufacturing and testing processes
Compatibility
Compatible with various power electronics circuits and systems
Suitable for use in high-voltage, high-power applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Industrial and automotive electronics
Product Lifecycle
Mature and widely-used product
Readily available with long-term support and supply assurance
Replacement or upgrade options may be available from onsemi
Key Reasons to Choose This Product
Excellent high-voltage and high-current performance
Robust and reliable operation
Efficient heat dissipation and easy integration
Wide range of power electronics applications
Long-term availability and support from onsemi
FJP13009H1TUAMI Semiconductor/onsemi