Manufacturer Part Number
FJP13007H1TU
Manufacturer
Fairchild (onsemi)
Introduction
High power NPN silicon bipolar transistor
Product Features and Performance
High power handling capacity up to 80 W
High collector-emitter breakdown voltage up to 400 V
High collector current up to 8 A
Low collector-emitter saturation voltage
High current gain
High transition frequency up to 4 MHz
Product Advantages
Robust design for high power applications
Reliable performance in harsh environments
Suitable for a wide range of power electronics and control circuits
Key Technical Parameters
Power Rating: 80 W
Collector-Emitter Breakdown Voltage: 400 V
Collector Current: 8 A
Collector-Emitter Saturation Voltage: 3 V @ 2 A, 8 A
Current Gain: 15 @ 2 A, 5 V
Transition Frequency: 4 MHz
Quality and Safety Features
Designed and manufactured to high quality standards
Robust construction for reliable operation
Compliance with relevant safety regulations
Compatibility
Suitable for a wide range of power electronics and control circuits
Can be used as a replacement for similar high power NPN transistors
Application Areas
Power supplies
Motor drives
Switching circuits
Industrial controls
Automotive electronics
Product Lifecycle
This product is still in active production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High power handling capacity
High voltage and current ratings
Low saturation voltage for efficient operation
High current gain and transition frequency
Reliable and robust design
Widely compatible with various applications