FGY120T65SPD-F085 - onsemi

Manufacturer Part Number

FGY120T65SPD-F085

Manufacturer

onsemi

Introduction

Power discrete semiconductor device

Insulated Gate Bipolar Transistor (IGBT)

Product Features and Performance

Trench Field Stop IGBT technology

650V Collector-Emitter Breakdown Voltage

240A Collector Current (Max)

85V Collector-Emitter Saturation Voltage

123ns Reverse Recovery Time

162nC Gate Charge

378A Pulsed Collector Current

8J Turn-On Switching Energy, 3.5J Turn-Off Switching Energy

53ns Turn-On Delay Time, 102ns Turn-Off Delay Time

Product Advantages

High power density

Low conduction and switching losses

Improved ruggedness and reliability

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 650V

Current Collector (Ic) (Max): 240A

Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 120A

Reverse Recovery Time (trr): 123ns

Gate Charge: 162nC

Current Collector Pulsed (Icm): 378A

Switching Energy: 6.8J (on), 3.5J (off)

Td (on/off) @ 25°C: 53ns/102ns

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Compatibility

TO-247-3 package

Compatible with standard IGBT gate drivers

Application Areas

Automotive

Industrial motor drives

Power conversion systems

Renewable energy systems

Product Lifecycle

Currently in production

No plans for discontinuation

Replacement or upgrade options available from onsemi

Key Reasons to Choose This Product

High power density and efficiency

Low conduction and switching losses

Improved ruggedness and reliability

Automotive and industrial grade quality

Compatibility with standard IGBT gate drivers

Availability of replacement and upgrade options