IXGH28N120BD1 - IXYS

Manufacturer Part Number

IXGH28N120BD1

Manufacturer

IXYS Corporation

Introduction

This is a single Insulated Gate Bipolar Transistor (IGBT) from IXYS Corporation.

Product Features and Performance

1200V Collector-Emitter Breakdown Voltage

50A Continuous Collector Current

150A Pulsed Collector Current

250W Power Dissipation

40ns Reverse Recovery Time

92nC Gate Charge

Positive Temperature Coefficient

Optimized for Soft Switching Applications

Product Advantages

High Voltage and Current Handling Capability

Fast Switching Speed

Low Conduction and Switching Losses

Robust Design for Reliable Operation

Key Technical Parameters

IGBT Type: PT (Punch-Through)

Vce(on) (Max): 3.5V @ 15V, 28A

Td (on/off) @ 25°C: 30ns/210ns

Operating Temperature Range: -55°C to 150°C (TJ)

Quality and Safety Features

RoHS3 Compliant

TO-247AD Package

Compatibility

This IGBT is suitable for use in a variety of power electronics applications, including motor drives, power supplies, and inverters.

Application Areas

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Solar Inverters

Welding Equipment

Induction Heating

Product Lifecycle

This product is an active and in-production part from IXYS Corporation. Replacements and upgrades may be available as technology advances.

Key Reasons to Choose This Product

High voltage and current handling capability for demanding applications

Fast switching speed and low losses for efficient power conversion

Robust design and wide operating temperature range for reliable performance

Compatibility with a wide range of power electronics applications

RoHS3 compliance for environmentally-friendly use