Manufacturer Part Number
IXGH30N120B3D1
Manufacturer
IXYS Corporation
Introduction
The IXGH30N120B3D1 is a high-performance IGBT (Insulated Gate Bipolar Transistor) transistor from IXYS Corporation.
Product Features and Performance
1200V Collector-Emitter Breakdown Voltage
300W Maximum Power Rating
30A Continuous Collector Current
Optimized for Fast Switching Applications
Low Conduction Losses
Short Reverse Recovery Time of 100ns
Low Gate Charge of 87nC
Product Advantages
High Power Density
Fast Switching Capability
Improved Electrical Efficiency
Reliable Operation
Key Technical Parameters
IGBT Type: PT (Punch-Through)
Vce(on) (Max) @ 15V, 30A: 3.5V
Gate Charge: 87nC
Collector Pulsed Current (Icm): 150A
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Turn-on/off Delay Time @ 25°C: 16ns/127ns
Quality and Safety Features
RoHS3 Compliant
TO-247AD Package
Compatibility
Compatible with various IGBT-based power electronics applications
Application Areas
Switching Power Supplies
Motor Drives
Induction Heating
Power Factor Correction
Renewable Energy Inverters
Product Lifecycle
This product is currently in production and available for purchase.
Replacement or upgrade options may be available in the future.
Several Key Reasons to Choose This Product
High power density and fast switching capability for efficient power conversion
Low conduction and switching losses for improved energy efficiency
Reliable and robust performance for demanding applications
RoHS3 compliance for environmentally-friendly design
Availability and compatibility with various power electronics systems
