Manufacturer Part Number
IXGH30N60B2
Manufacturer
IXYS Corporation
Introduction
High performance IGBT transistor
Suitable for a wide range of power electronics applications
Product Features and Performance
High power handling capability up to 190W
Fast switching speed with turn-on time of 13ns and turn-off time of 110ns
Low on-state voltage drop of 1.8V @ 15V, 24A
High collector current rating of 70A (max)
Wide operating temperature range of -55°C to 150°C
Product Advantages
Optimized for efficient and reliable power conversion
Excellent thermal performance
Fast and efficient switching
Key Technical Parameters
IGBT Type: PT (punch-through)
Collector-Emitter Breakdown Voltage: 600V (max)
Collector Current (max): 70A
Switching Energy: 320μJ (turn-off)
Quality and Safety Features
Robust TO-247 package design
Guaranteed performance within specified operating conditions
Compatibility
Compatible with standard IGBT gate drive circuitry
Application Areas
Switch-mode power supplies
Motor drives
Welding equipment
Induction heating
Other high-power electronic applications
Product Lifecycle
Currently in production
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
High power handling and efficiency
Fast switching for improved system performance
Reliable operation across wide temperature range
Proven IGBT technology from a reputable manufacturer
IXGH30N120B3IXYSDISC IGBT PT-MID FREQUENCY TO-24