Manufacturer Part Number
IXGH30N60C3D1
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistors IGBTs Single
Product Features and Performance
RoHS3 Compliant
TO-247AD package
Operating Temperature: -55°C ~ 150°C (TJ)
Power Rating: 220 W
Collector-Emitter Breakdown Voltage: 600 V
Collector Current (Max): 60 A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Reverse Recovery Time: 25 ns
Gate Charge: 38 nC
Collector Current Pulsed (Max): 150 A
Switching Energy: 270J (on), 90J (off)
Turn-on/off Delay Time: 16ns/42ns
Product Advantages
High power density
Fast switching speed
Low conduction and switching losses
Reliable performance
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 60 A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Reverse Recovery Time (trr): 25 ns
Gate Charge: 38 nC
Current Collector Pulsed (Icm): 150 A
Switching Energy: 270J (on), 90J (off)
Td (on/off) @ 25°C: 16ns/42ns
Quality and Safety Features
RoHS3 Compliant
TO-247AD package for reliable thermal performance
Compatibility
Standard IGBT input type
Application Areas
Power conversion and control systems
Motor drives
Inverters
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Product Lifecycle
Current production model, no plans for discontinuation
Replacement and upgrade options available from IXYS
Key Reasons to Choose This Product
High power density and efficiency
Fast switching capability for high-speed applications
Reliable and robust performance
Compatibility with standard IGBT control circuits
RoHS compliance for use in diverse applications
Availability of replacement and upgrade options from the manufacturer
IXGH30N60B2SNIXYS / Littelfuse