Manufacturer Part Number
IXGH32N170
Manufacturer
IXYS Corporation
Introduction
High-power IGBT (Insulated Gate Bipolar Transistor)
Product Features and Performance
High voltage rating up to 1700V
High current rating up to 75A
Low collector-emitter saturation voltage (Vce(on))
Fast switching speed with short turn-on/off delay times
Low gate charge for efficient switching
High power density and efficiency
Wide operating temperature range from -55°C to 150°C
Product Advantages
Suitable for high-power applications
Excellent electrical characteristics for improved system performance
Reliable and robust design
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCES): 1700V
Collector Current (IC): 75A
Collector-Emitter Saturation Voltage (VCE(on)): 3.3V @ 15V, 32A
Gate Charge (Qg): 155nC
Switching Energy (Eoff): 11mJ
Turn-on/off Delay Times (td(on/off)): 45ns/270ns
Quality and Safety Features
RoHS3 compliant
TO-247AD package for reliable thermal management
Compatibility
Suitable for various high-power applications, such as motor drives, power supplies, and inverters
Application Areas
Industrial motor drives
Power conversion and control systems
Renewable energy systems
Uninterruptible power supplies (UPS)
Welding equipment
Product Lifecycle
Currently available, no discontinuation plans known
Several Key Reasons to Choose This Product
High voltage and current capability for demanding applications
Efficient switching performance with low losses
Reliable and rugged design for industrial environments
Wide operating temperature range for versatile usage
RoHS compliance for environmental responsibility
IXGH32N50BIXYS / LittelfuseIGBT Module