Manufacturer Part Number
IXGH32N170A
Manufacturer
IXYS Corporation
Introduction
High-performance insulated gate bipolar transistor (IGBT) device
Product Features and Performance
Designed for power electronics and motor control applications
Optimized for efficient and reliable operation
Low conduction and switching losses
Fast switching speed with low gate charge
High blocking voltage capability up to 1700V
High current handling capacity up to 32A
Product Advantages
Excellent thermal performance
Robust and reliable design
Optimized for energy-efficient systems
Key Technical Parameters
IGBT Type: Non-Punch-Through (NPT)
Voltage Collector Emitter Breakdown (Max): 1700V
Current Collector (Ic) (Max): 32A
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
Gate Charge: 155nC
Current Collector Pulsed (Icm): 110A
Switching Energy: 1.5mJ (off)
Td (on/off) @ 25°C: 46ns/260ns
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with various power electronics and motor control applications
Application Areas
Power electronics
Motor control
Renewable energy systems
Industrial automation
Product Lifecycle
The IXGH32N170A is an actively supported product. There are no plans for discontinuation, and replacement or upgrade options are available.
Key Reasons to Choose This Product
High efficiency and low power losses
Excellent thermal performance and reliability
Optimized for energy-efficient systems
Fast switching speed and low gate charge
Compatibility with a wide range of applications
Supported by a reliable and experienced manufacturer
