Manufacturer Part Number
IXGH32N120A3
Manufacturer
IXYS Corporation
Introduction
The IXGH32N120A3 is a discrete semiconductor product, specifically a transistor in the IGBT (Insulated Gate Bipolar Transistor) single category.
Product Features and Performance
RoHS3 compliant
TO-247AD package
GenX3 series
Operating temperature range: -55°C to 150°C (TJ)
Power rating: 300 W maximum
IGBT type: PT (Punch-Through)
Collector-emitter breakdown voltage: 1200 V maximum
Collector current: 75 A maximum
Collector-emitter saturation voltage: 2.35 V maximum at 15 V gate, 32 A collector
Gate charge: 89 nC
Pulsed collector current: 230 A
Product Advantages
High power handling capability
Wide operating temperature range
Robust and reliable performance
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 75 A
Vce(on) (Max) @ Vge, Ic: 2.35 V @ 15 V, 32 A
Gate Charge: 89 nC
Current Collector Pulsed (Icm): 230 A
Quality and Safety Features
RoHS3 compliant
TO-247AD package for secure mounting and heat dissipation
Compatibility
Compatible with a wide range of power electronic applications
Application Areas
Suitable for use in various power electronic circuits and systems, such as motor drives, power supplies, and industrial control equipment.
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Several Key Reasons to Choose This Product
High power handling capability for demanding applications
Wide operating temperature range for versatile use
Robust and reliable performance for long-term reliability
RoHS3 compliance for environmentally-friendly applications
Compatibility with a wide range of power electronic systems
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