IXGH30N60B2D1 - IXYS

Manufacturer Part Number

IXGH30N60B2D1

Manufacturer

IXYS Corporation

Introduction

High-performance IGBT transistor suitable for a variety of power conversion applications.

Product Features and Performance

Optimized for fast switching and low conduction losses

High power density and efficiency

Wide operating temperature range (-55°C to 150°C)

High current capability up to 70A

Fast switching with low gate charge (66nC)

Short reverse recovery time (25ns)

Product Advantages

Excellent power handling capability

Fast switching for improved system efficiency

Reliable performance across a wide temperature range

Compact design for space-constrained applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 600V

Collector Current (Max): 70A

Collector-Emitter Saturation Voltage: 1.8V @ 15V, 24A

Gate Charge: 66nC

Reverse Recovery Time: 25ns

Quality and Safety Features

Robust TO-247AD package for reliable operation

Designed and manufactured to IXYS' high quality standards

Compatibility

Suitable for a wide range of power conversion applications, including motor drives, power supplies, and inverters.

Application Areas

Industrial motor drives

Power supplies

Renewable energy inverters

Uninterruptible power supplies (UPS)

Welding equipment

Induction heating

Product Lifecycle

This IGBT transistor is an active and widely used product in IXYS' portfolio.

Replacements and upgrades are readily available.

Key Reasons to Choose This Product

High efficiency and fast switching for improved system performance

Robust design and wide operating temperature range for reliable operation

Compact package and high power density for space-constrained applications

Proven technology and quality from a trusted manufacturer, IXYS Corporation