Manufacturer Part Number
FGPF4536
Manufacturer
Fairchild (onsemi)
Introduction
IGBT Transistor
Product Features and Performance
Trench IGBT design
4W power rating
360V collector-emitter breakdown voltage
8V collector-emitter saturation voltage @ 15V gate, 50A collector
47nC gate charge
220A pulsed collector current
Product Advantages
High power handling capability
Low conduction losses
Fast switching speed
Reliable trench IGBT structure
Key Technical Parameters
Power Rating: 28.4W
Collector-Emitter Voltage: 360V
Collector-Emitter Saturation Voltage: 1.8V
Gate Charge: 47nC
Pulsed Collector Current: 220A
Quality and Safety Features
TO-220F-3 industry standard package
RoHS compliant
Compatibility
Compatible with standard IGBT gate drive circuits
Application Areas
Power inverters
Motor drives
Industrial automation
Power supplies
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacements and upgrades may be available from the manufacturer
Key Reasons to Choose This Product
High power handling and efficiency
Low conduction losses
Fast switching speed
Reliable trench IGBT design
Industry standard package and compatibility