FGY60T120SQDN - onsemi

Manufacturer Part Number

FGY60T120SQDN

Manufacturer

onsemi

Introduction

High-performance insulated-gate bipolar transistor (IGBT) for industrial and consumer applications

Product Features and Performance

Voltage rating: 1200 V

Current rating: 120 A

Low Vce(on) of 1.95 V at 60 A

Fast switching with turn-on time of 52 ns and turn-off time of 296 ns

High power density with 517 W power rating

Wide operating temperature range of -55°C to 175°C

Product Advantages

Excellent efficiency and switching performance

Robust and reliable design

Suitable for a variety of industrial and consumer applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 1200 V

Current Collector (Ic) (Max): 120 A

Vce(on) (Max) @ Vge, Ic: 1.95 V @ 15 V, 60 A

Gate Charge: 311 nC

Current Collector Pulsed (Icm): 240 A

Td (on/off) @ 25°C: 52 ns / 296 ns

Quality and Safety Features

RoHS 3 compliant

TO-247-3 package for high reliability and thermal performance

Compatibility

Compatible with various industrial and consumer power electronics applications

Application Areas

Inverters

Motor drives

Power supplies

Welding equipment

Home appliances

Product Lifecycle

Currently available and not nearing discontinuation

Replacement or upgrade options may be available from onsemi

Key Reasons to Choose This Product

Excellent switching performance and efficiency

Robust and reliable design

Wide operating temperature range

Suitable for a variety of industrial and consumer applications

RoHS 3 compliance for environmental sustainability