Manufacturer Part Number
FGY40T120SMD
Manufacturer
onsemi
Introduction
The FGY40T120SMD is a high-performance insulated-gate bipolar transistor (IGBT) from onsemi, suitable for a wide range of power electronics applications.
Product Features and Performance
Trench field stop IGBT technology
Rated for up to 1200V collector-emitter voltage
Supports up to 80A collector current
Low Vce(on) of 2.4V @ 15V, 40A
Fast reverse recovery time of 65ns
Low switching losses of 2.7mJ (on) and 1.1mJ (off)
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent efficiency and power density
Robust and reliable performance
Suitable for high-power applications
Easy to integrate and implement
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 1200V
Collector Current (Max): 80A
Collector Current Pulsed (Max): 160A
On-State Voltage Drop (Max): 2.4V
Reverse Recovery Time: 65ns
Gate Charge: 370nC
Quality and Safety Features
ROHS3 compliant
TO-247 package for reliable thermal performance
Compatibility
Suitable for a wide range of power electronics applications, such as motor drives, power supplies, and inverters.
Application Areas
Industrial
Renewable energy
Transportation
Home appliances
Product Lifecycle
This product is currently in active production and available for purchase.
No information on planned discontinuation or availability of replacements or upgrades.
Several Key Reasons to Choose This Product
Excellent performance characteristics, including high voltage and current ratings, low on-state voltage drop, and fast switching speeds.
Robust and reliable design, suitable for demanding power electronics applications.
Wide operating temperature range, ensuring reliable performance in diverse environments.
Easy to integrate and implement, with a standard TO-247 package.
Supported by onsemi's global presence and technical expertise.