Manufacturer Part Number
FGY160T65SPD-F085
Manufacturer
onsemi
Introduction
High-performance IGBT transistor for automotive and industrial applications
Product Features and Performance
Trench field stop IGBT technology
650V collector-emitter voltage rating
240A continuous collector current rating
Low VCE(on) of 2.05V @ 15V, 160A
Fast switching with short turn-on/off times
Low switching losses
Product Advantages
Excellent electrical characteristics
High power density
Reliable performance
Suitability for high-power applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 650V
Current Collector (Ic) (Max): 240A
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
Reverse Recovery Time (trr): 132ns
Switching Energy: 12.4mJ (on), 5.7mJ (off)
Td (on/off) @ 25°C: 53ns/98ns
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Excellent thermal and electrical performance
Compatibility
TO-247-3 package
Suitable for automotive, industrial, and power conversion applications
Application Areas
Electric vehicles
Hybrid electric vehicles
Industrial motor drives
Power inverters
Uninterruptible power supplies (UPS)
Product Lifecycle
Current product, no indication of discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High power density and efficiency
Reliable and robust performance
Suitability for demanding automotive and industrial applications
Compliance with relevant safety and quality standards