FGY75T120SQDN - onsemi

Manufacturer Part Number

FGY75T120SQDN

Manufacturer

onsemi

Introduction

This product is a discrete semiconductor device categorized as an IGBT (Insulated Gate Bipolar Transistor), a single-transistor model.

Product Features and Performance

ROHS3 compliant

TO-247-3 package

Through-hole mounting

Operating temperature range: -55°C to 175°C

Maximum power rating: 790W

IGBT type: Field Stop

Collector-Emitter Breakdown Voltage (max): 1200V

Collector Current (max): 150A

Collector-Emitter Saturation Voltage (max): 1.95V @ 15V, 75A

Reverse Recovery Time: 99ns

Gate Charge: 399nC

Pulsed Collector Current (max): 300A

Switching Energy: 6.25mJ (on), 1.96mJ (off)

Turn-on/off Delay Time: 64ns/332ns

Product Advantages

High power handling capability

Fast switching performance

Robust and reliable operation

Wide temperature range

Key Technical Parameters

Voltage, Current, and Power Ratings

Switching Characteristics

Thermal Management

Quality and Safety Features

ROHS3 compliance

Robust TO-247-3 package

Compatibility

This IGBT is designed for use in a variety of power electronics applications.

Application Areas

Motor drives

Switching power supplies

Renewable energy systems

Industrial controls

Product Lifecycle

This IGBT product is currently available and not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

High power density and efficiency

Excellent switching performance

Wide operating temperature range

Reliable and rugged construction

Compatibility with various power electronics applications