FGB3040CS - onsemi

Manufacturer Part Number

FGB3040CS

Manufacturer

onsemi

Introduction

Single IGBT Transistor

Product Features and Performance

Operating Temperature Range: -40°C ~ 175°C (TJ)

Power Rating: 150 W

Collector-Emitter Breakdown Voltage: 430 V

Collector Current (Max): 21 A

Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A

Gate Charge: 15 nC

Turn-on/off Delay Time (@ 25°C): -/4.7 μs

Product Advantages

High power density

Low conduction losses

Fast switching speed

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 430 V

Current Collector (Ic) (Max): 21 A

Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A

Gate Charge: 15 nC

Td (on/off) @ 25°C: -/4.7 μs

Quality and Safety Features

RoHS3 Compliant

Compatibility

Package: TO-263-7, DPak (6 Leads + Tab), TO-263CB

Supplier Device Package: DPAK-6

Application Areas

Power conversion and control systems

Motor drives

Power supplies

Inverters

Welding equipment

Product Lifecycle

Current product, no discontinuation planned

Several Key Reasons to Choose This Product

High power density

Low conduction losses

Fast switching speed

Wide operating temperature range

RoHS3 compliance

Suitable for a variety of power conversion and control applications