FGB20N60SFD - onsemi

Manufacturer Part Number

FGB20N60SFD

Manufacturer

onsemi

Introduction

High-performance silicon field stop insulated-gate bipolar transistor (IGBT) in a surface mount DPAK (TO-263) package.

Product Features and Performance

Optimized for high-frequency and high-efficiency switching applications

Low conduction and switching losses

Fast switching speed with short turn-on and turn-off times

High current handling capability up to 40A

High voltage rating up to 600V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent thermal and electrical performance

Compact surface mount package for high-density designs

Reliable and robust construction

Key Technical Parameters

IGBT Type: Field Stop

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Ic) (Max): 40A

Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A

Reverse Recovery Time (trr): 34ns

Gate Charge: 65nC

Current Collector Pulsed (Icm): 60A

Switching Energy: 370J (on), 160J (off)

Td (on/off) @ 25°C: 13ns/90ns

Quality and Safety Features

RoHS3 compliant

Reliable and robust construction for industrial and automotive applications

Compatibility

Surface mount DPAK (TO-263) package

Suitable for high-frequency and high-efficiency switching applications

Application Areas

Industrial motor drives

Power supplies

Welding equipment

Induction heating

Uninterruptible power supplies (UPS)

Renewable energy systems

Product Lifecycle

Current product offering, not nearing discontinuation

Replacements and upgrades available from onsemi

Several Key Reasons to Choose This Product

Excellent thermal and electrical performance

Fast switching speed and low switching losses

High current and voltage handling capabilities

Compact and reliable surface mount package

Suitable for a wide range of high-frequency and high-efficiency switching applications