Manufacturer Part Number
FGB20N60SFD
Manufacturer
onsemi
Introduction
High-performance silicon field stop insulated-gate bipolar transistor (IGBT) in a surface mount DPAK (TO-263) package.
Product Features and Performance
Optimized for high-frequency and high-efficiency switching applications
Low conduction and switching losses
Fast switching speed with short turn-on and turn-off times
High current handling capability up to 40A
High voltage rating up to 600V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent thermal and electrical performance
Compact surface mount package for high-density designs
Reliable and robust construction
Key Technical Parameters
IGBT Type: Field Stop
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 40A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Reverse Recovery Time (trr): 34ns
Gate Charge: 65nC
Current Collector Pulsed (Icm): 60A
Switching Energy: 370J (on), 160J (off)
Td (on/off) @ 25°C: 13ns/90ns
Quality and Safety Features
RoHS3 compliant
Reliable and robust construction for industrial and automotive applications
Compatibility
Surface mount DPAK (TO-263) package
Suitable for high-frequency and high-efficiency switching applications
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
Current product offering, not nearing discontinuation
Replacements and upgrades available from onsemi
Several Key Reasons to Choose This Product
Excellent thermal and electrical performance
Fast switching speed and low switching losses
High current and voltage handling capabilities
Compact and reliable surface mount package
Suitable for a wide range of high-frequency and high-efficiency switching applications
FGB3040CSonsemiIGBT 430V 21A TO263-6