APT25GP90BDQ1G - Microchip Technology

Manufacturer Part Number

APT25GP90BDQ1G

Manufacturer

Microchip Technology

Introduction

This is a high-power insulated-gate bipolar transistor (IGBT) from Microchip Technology's POWER MOS 7 series. It is designed for use in various power electronics applications.

Product Features and Performance

IGBT type: PT (Punch Through)

Voltage Collector Emitter Breakdown (Max): 900 V

Current Collector (Ic) (Max): 72 A

Vce(on) (Max) @ Vge, Ic: 3.9 V @ 15 V, 25 A

Gate Charge: 110 nC

Current Collector Pulsed (Icm): 110 A

Switching Energy: 370 J (off)

Td (on/off) @ 25°C: 13 ns/55 ns

Product Advantages

High voltage and current capabilities

Low on-state voltage drop

Fast switching performance

Suitable for high-power applications

Key Technical Parameters

Power Max: 417 W

Operating Temperature: -55°C ~ 150°C (TJ)

Package: TO-247-3

Quality and Safety Features

RoHS3 compliant

TO-247 [B] package

Compatibility

This IGBT is compatible with various power electronics applications that require high voltage, high current, and fast switching capabilities.

Application Areas

Inverters

Switched-mode power supplies

Motor drives

Welding equipment

Induction heating

Industrial automation

Product Lifecycle

This IGBT is currently in production and is not nearing discontinuation. Replacement or upgrade options are available from Microchip Technology.

Key Reasons to Choose This Product

High power handling capabilities with a maximum power rating of 417 W

Wide operating temperature range of -55°C to 150°C (TJ)

Fast switching performance with turn-on and turn-off times of 13 ns and 55 ns, respectively

Low on-state voltage drop of 3.9 V at 15 V gate voltage and 25 A collector current

Suitable for a variety of high-power, high-voltage, and high-current applications