APT25GT120BRDQ2G - Microchip Technology

Manufacturer Part Number

APT25GT120BRDQ2G

Manufacturer

Microchip Technology

Introduction

High-performance single IGBT transistor

Product Features and Performance

Optimized for high-speed switching applications

Low gate-emitter threshold voltage

Low saturation voltage

Low switching losses

High current density

Product Advantages

Efficient power conversion

Reliable performance

Compact design

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 1200 V

Current Collector (Ic) (Max): 54 A

Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A

Gate Charge: 170 nC

Current Collector Pulsed (Icm): 75 A

Switching Energy: 930J (on), 720J (off)

Td (on/off) @ 25°C: 14ns/150ns

Quality and Safety Features

ROHS3 compliant

Reliable and durable construction

Compatibility

Compatible with a wide range of power electronics applications

Application Areas

Suitable for high-speed switching applications, such as inverters, motor drives, and power supplies

Product Lifecycle

This product is currently available and not nearing discontinuation

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent power conversion efficiency

Reliable and durable performance

Compact and space-saving design

Optimized for high-speed switching applications

Low switching losses and fast switching speeds