Manufacturer Part Number
APT25GP120BDQ1G
Manufacturer
Microchip Technology
Introduction
High-power insulated gate bipolar transistor (IGBT) designed for high-voltage, high-current switching applications.
Product Features and Performance
1200V collector-emitter breakdown voltage
69A maximum collector current
9V maximum collector-emitter saturation voltage at 25A
110nC gate charge
90A maximum pulsed collector current
500J turn-on switching energy, 440J turn-off switching energy
12ns turn-on, 70ns turn-off switching times
-55°C to 150°C operating temperature range
417W maximum power dissipation
Product Advantages
High-voltage, high-current switching capability
Fast switching speed
Robust thermal performance
Wide operating temperature range
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 69A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Gate Charge: 110nC
Current Collector Pulsed (Icm): 90A
Switching Energy: 500J (on), 440J (off)
Td (on/off) @ 25°C: 12ns/70ns
Quality and Safety Features
ROHS3 compliant
Through-hole TO-247 package
Compatibility
Compatible with various high-power, high-voltage applications
Application Areas
Switching power supplies
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Welding equipment
Induction heating
Other high-power, high-voltage applications
Product Lifecycle
Currently in production
No information on upcoming discontinuation
Replacement or upgrade options may be available from Microchip Technology
Several Key Reasons to Choose This Product
High voltage and current handling capabilities
Fast switching speeds for efficient power conversion
Robust thermal performance for reliable operation
Wide operating temperature range for versatile applications
RoHS3 compliance for environmental responsibility
Through-hole mounting for ease of integration