Manufacturer Part Number
APT25GN120BG
Manufacturer
Microchip Technology
Introduction
The APT25GN120BG is a high-power, trench field-stop IGBT (Insulated Gate Bipolar Transistor) from Microchip Technology. It is designed for use in a wide range of power electronics applications.
Product Features and Performance
Trench field-stop IGBT technology
High voltage rating of 1200V
High current capability of 67A
Low on-state voltage drop (Vce(on)) of 2.1V at 25A
Fast switching with turn-on and turn-off times of 22ns and 280ns, respectively
High power handling capability of 272W
Product Advantages
Excellent efficiency due to low conduction and switching losses
Robust design for reliable operation
Suitable for high-power, high-frequency applications
Compact and easy-to-mount TO-247 package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 1200V
Collector Current (Max): 67A
Collector Current (Pulsed): 75A
Gate Charge: 155nC
Switching Energy (Turn-off): 2.15J
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
ROHS3 compliant
Tested and certified for safety and reliability
Compatibility
Suitable for use in a wide range of power electronics applications, including motor drives, power supplies, and inverters.
Application Areas
Industrial motor drives
Power supplies
Inverters
Uninterruptible power supplies (UPS)
Welding equipment
Medical equipment
Renewable energy systems
Product Lifecycle
The APT25GN120BG is an active product, and Microchip Technology continues to manufacture and support it. There are no immediate plans for discontinuation, and replacement or upgrade options are available if needed.
Key Reasons to Choose This Product
Excellent efficiency and performance due to advanced IGBT technology
Robust and reliable design for demanding applications
Compact and easy-to-mount package
Compatibility with a wide range of power electronics applications
Ongoing support and availability from a leading semiconductor manufacturer