Manufacturer Part Number
APT25GT120BRG
Manufacturer
Microchip Technology
Introduction
High-performance insulated gate bipolar transistor (IGBT) for industrial applications
Product Features and Performance
NPT IGBT technology
Collector-emitter voltage up to 1200V
Collector current up to 54A
Extremely low conduction and switching losses
Fast switching speed with low gate charge
Operating temperature range of -55°C to 150°C
Product Advantages
Optimized for high-frequency, high-power industrial applications
Excellent thermal performance and reliability
Robust design for harsh environments
Key Technical Parameters
Collector-emitter voltage: 1200V (max)
Collector current: 54A (max)
VCE(on): 3.7V @ 15V, 25A
Gate charge: 170nC
Collector current pulse: 75A
Switching energy: 930J (on), 720J (off)
Turn-on/off delay time: 14ns/150ns
Quality and Safety Features
RoHS3 compliant
TO-247 package for reliable performance
Compatibility
Suitable for a wide range of industrial applications, such as motor drives, power supplies, and power inverters
Application Areas
Industrial motor drives
Uninterruptible power supplies (UPS)
Welding equipment
Solar inverters
Induction heating systems
Product Lifecycle
Current product in production
Replacement or upgrade options available from Microchip Technology
Several Key Reasons to Choose This Product
Exceptional performance and efficiency through advanced NPT IGBT technology
Robust and reliable design for harsh industrial environments
Wide operating temperature range for versatile applications
Fast switching speed and low gate charge for high-frequency operation
Comprehensive technical support and product lifecycle management from Microchip Technology