APT28M120B2 - Microchip Technology

Manufacturer Part Number

APT28M120B2

Manufacturer

Microchip Technology

Introduction

High-voltage, high-performance N-channel MOSFET with industry-leading on-resistance and robust avalanche capability

Product Features and Performance

1200V breakdown voltage

560mΩ on-resistance at 14A, 10V

29A continuous drain current at 25°C

9670pF input capacitance

1135W power dissipation

Suitable for high-voltage, high-current switching applications

Product Advantages

Industry-leading on-resistance

High avalanche capability

Robust design for high-stress applications

Efficient switching performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 1200V

Gate to Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 560mΩ @ 14A, 10V

Continuous Drain Current (Id): 29A @ 25°C

Input Capacitance (Ciss): 9670pF @ 25V

Power Dissipation (Pd): 1135W @ Tc

Quality and Safety Features

RoHS3 compliant

Designed and tested for high reliability

Compatibility

Suitable for a wide range of high-voltage, high-current switching applications, such as:

Power supplies

Motor drives

Inverters

Welding equipment

Industrial automation

Application Areas

High-voltage, high-current switching

Power conversion

Industrial and consumer electronics

Product Lifecycle

This product is an active and continuously supported part of Microchip's POWER MOS 8 series. Replacements and upgrades are available as needed.

Key Reasons to Choose This Product

Industry-leading low on-resistance for efficient power conversion

Robust avalanche capability for reliable operation in high-stress applications

Proven performance and reliability in a wide range of high-voltage, high-current applications

Comprehensive technical support and long-term availability from a trusted manufacturer