Manufacturer Part Number
NGD18N40ACLBT4G
Manufacturer
Littelfuse
Introduction
The NGD18N40ACLBT4G is a discrete semiconductor product, specifically a single Insulated-Gate Bipolar Transistor (IGBT) from Littelfuse.
Product Features and Performance
High voltage rating of 430V
High current rating of 15A continuous, 50A pulsed
Low on-state voltage of 2.5V @ 4V gate, 15A
Wide operating temperature range of -55°C to 175°C
Surface mount package (TO-252, D-Pak)
Suitable for high-power switching applications
Product Advantages
Excellent performance in high-power switching circuits
Compact and efficient surface mount package
Robust design for reliable operation in harsh environments
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 430V
Current Collector (Ic) (Max): 15A
Current Collector Pulsed (Icm): 50A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A
Power Max: 115W
Operating Temperature: -55°C to 175°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of high-power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Induction heating
Industrial automation
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
High voltage and current ratings for demanding applications
Excellent performance characteristics, including low on-state voltage
Robust design for reliable operation in harsh environments
Compact surface mount package for efficient use of board space
RoHS3 compliance for environmental responsibility