NGD8205ANT4G - onsemi

Manufacturer Part Number

NGD8205ANT4G

Manufacturer

onsemi

Introduction

This product is a discrete semiconductor component, specifically a transistor of the IGBT (Insulated Gate Bipolar Transistor) type.

Product Features and Performance

Operating temperature range: -55°C to 175°C (TJ)

Power rating: 125 W

Collector-emitter breakdown voltage (maximum): 390 V

Collector current (maximum): 20 A

Collector-emitter saturation voltage (maximum): 1.9 V @ 4.5 V, 20 A

Collector current, pulsed (maximum): 50 A

Turn-on/-off time: -/5 μs

Product Advantages

High power handling capability

Wide operating temperature range

Low saturation voltage for improved efficiency

Suitable for high-voltage, high-current switching applications

Key Technical Parameters

Transistor type: IGBT, single

Package: TO-252-3, D-Pak (2 Leads + Tab), SC-63

Surface mount configuration

Quality and Safety Features

Designed and manufactured to high quality and reliability standards

Compatibility

Compatible with a variety of high-power, high-voltage applications

Application Areas

Switching power supplies

Motor drives

Inverters

Industrial control equipment

Product Lifecycle

This product is an active, in-production component from the manufacturer.

Replacements and upgrades may be available as technology evolves.

Several Key Reasons to Choose This Product

Excellent power handling and high voltage capability

Compact surface mount package for efficient board layout

Proven reliability and performance in a wide range of applications

Availability and ongoing support from a reputable manufacturer