NGD8201NT4G - onsemi

Manufacturer Part Number

NGD8201NT4G

Manufacturer

onsemi

Introduction

The NGD8201NT4G is a high-performance discrete IGBT (Insulated Gate Bipolar Transistor) product from onsemi.

Product Features and Performance

Designed for high-power switching applications

Capable of handling up to 125W of power

Rated for a maximum collector-emitter voltage of 440V

Supports a maximum collector current of 20A (continuous) and 50A (pulsed)

Features low on-state voltage drop (Vce(on)) of 1.9V at 20A

Fast switching speeds with turn-off time of 5μs

Product Advantages

Excellent power handling and efficiency

High voltage and current capabilities

Low conduction losses

Reliable and robust design

Key Technical Parameters

Collector-Emitter Voltage (BVCES): 440V

Collector Current (IC): 20A continuous, 50A pulsed

On-state Voltage Drop (Vce(on)): 1.9V @ 4.5V, 20A

Turn-Off Time (td(off)): 5μs

Operating Temperature Range: -55°C to 175°C

Quality and Safety Features

Stringent quality control and testing procedures

Compliance with industry safety standards

Compatibility

Compatible with various power electronics and industrial control applications

Application Areas

Motor drives

Power inverters

Welding equipment

Induction heating systems

Uninterruptible Power Supplies (UPS)

Product Lifecycle

The NGD8201NT4G is an actively supported product in onsemi's portfolio.

Replacement or upgrade options may be available in the future as technology evolves.

Key Reasons to Choose This Product

Excellent power handling capabilities for high-power applications

Reliable and efficient performance with low conduction losses

Wide operating temperature range for versatile use

Compatibility with various power electronics systems

Backed by onsemi's quality and safety standards