Manufacturer Part Number
FDMS86183
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor device, specifically an N-Channel MOSFET transistor.
Product Features and Performance
100V drain-to-source voltage
±20V gate-to-source voltage
8mOhm maximum on-resistance at 16A, 10V
51A continuous drain current at 25°C case temperature
1515pF maximum input capacitance at 50V
63W maximum power dissipation at 25°C case temperature
-55°C to 150°C operating temperature range
Product Advantages
Low on-resistance for improved efficiency
High current handling capability
Compact 8-PQFN (5x6) package
Key Technical Parameters
MOSFET technology
N-Channel FET type
4V maximum gate threshold voltage at 90A
6V and 10V drive voltage range
14nC maximum gate charge at 6V
Quality and Safety Features
RoHS3 compliant
Compatibility
Surface mount package
Application Areas
Power management
Motor control
Switching power supplies
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades may be available
Key Reasons to Choose This Product
Excellent efficiency due to low on-resistance
High current capability for demanding applications
Compact package for space-constrained designs
Wide operating temperature range for reliability