Manufacturer Part Number
FDMS86202
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
120V drain-to-source voltage capability
Low on-resistance of 7.2mΩ @ 13.5A, 10V
High current rating of 13.5A continuous drain current at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed with low gate charge of 64nC @ 10V
Surface mount 8-PQFN (5x6) package
Product Advantages
Excellent power efficiency and thermal management
Suitable for high-power density and high-frequency switching applications
Reliable and robust performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 120V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 7.2mΩ @ 13.5A, 10V
Continuous Drain Current (Id): 13.5A @ 25°C
Input Capacitance (Ciss): 4250pF @ 60V
Power Dissipation (Pd): 2.7W @ 25°C, 156W @ 25°C (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Designed for a wide range of power management and control applications
Application Areas
Switching power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
Current product, no planned discontinuation
Several Key Reasons to Choose This Product
Excellent power efficiency and thermal management
High current capability and fast switching speed
Reliable and robust performance for safety-critical applications
Suitable for high-power density and high-frequency switching designs
Proven track record of onsemi's PowerTrench technology
FDMS86200 MOSFairchild (onsemi)