Manufacturer Part Number
FDMS86252
Manufacturer
onsemi
Introduction
The FDMS86252 is a high-performance N-Channel MOSFET transistor from onsemi, designed for a wide range of power management and control applications.
Product Features and Performance
150V Drain-to-Source Voltage (Vdss)
51 mOhm Maximum On-Resistance (Rds(on)) at 4.6A Drain Current and 10V Gate-to-Source Voltage
6A Continuous Drain Current (Id) at 25°C Ambient Temperature
16A Continuous Drain Current (Id) at 25°C Case Temperature
905 pF Maximum Input Capacitance (Ciss) at 75V Drain-to-Source Voltage
15 nC Maximum Gate Charge (Qg) at 10V Gate-to-Source Voltage
Product Advantages
Exceptional on-resistance-to-die-size ratio for increased power density
Optimized for high-frequency, high-efficiency switching applications
Robust design with high avalanche energy rating
Suitable for a wide range of operating temperatures (-55°C to 150°C)
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 150V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 51 mOhm
Continuous Drain Current (Id): 4.6A (Ta), 16A (Tc)
Input Capacitance (Ciss): 905 pF
Power Dissipation: 2.5W (Ta), 69W (Tc)
Quality and Safety Features
RoHS3 Compliant
AEC-Q101 Qualified
Compatibility
Suitable for use in a wide range of power management and control applications, including DC-DC converters, motor drives, and power supplies.
Application Areas
Power management and control
DC-DC converters
Motor drives
Power supplies
Product Lifecycle
The FDMS86252 is an active, in-production product from onsemi.
Replacement or upgrade options may be available from onsemi or other manufacturers.
Key Reasons to Choose This Product
Excellent on-resistance-to-die-size ratio for increased power density
Optimized for high-frequency, high-efficiency switching applications
Robust design with high avalanche energy rating
Wide operating temperature range (-55°C to 150°C)
RoHS3 compliance and AEC-Q101 qualification for reliability and safety
