Manufacturer Part Number
FDMS86263P
Manufacturer
onsemi
Introduction
The FDMS86263P is a high-performance P-channel MOSFET from onsemi, designed for a wide range of power management and switching applications.
Product Features and Performance
150V Drain-to-Source Voltage
Low On-Resistance of 53mΩ @ 4.4A, 10V
4A Continuous Drain Current at 25°C
22A Continuous Drain Current at Case Temperature
3905pF Input Capacitance @ 75V
5W Power Dissipation at Ambient Temperature, 104W at Case Temperature
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
Excellent power handling and efficiency
Low on-resistance for reduced power losses
High current capability
Compact 8-PQFN (5x6) package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 150V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 53mΩ @ 4.4A, 10V
Drain Current (Id): 4.4A (Ta), 22A (Tc)
Input Capacitance (Ciss): 3905pF @ 75V
Power Dissipation: 2.5W (Ta), 104W (Tc)
Quality and Safety Features
RoHS3 Compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of power management and switching circuits
Application Areas
Power supplies
Motor drives
Industrial controls
Lighting ballasts
High-power amplifiers
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent power handling and efficiency
Low on-resistance for reduced power losses
High current capability
Compact and versatile package
Suitable for a wide range of power management and switching applications
Backed by onsemi's quality and reliability
FDMS86252 MOSFairchild (onsemi)