Manufacturer Part Number
FDMS86350ET80
Manufacturer
onsemi
Introduction
The FDMS86350ET80 is a high-performance N-channel power MOSFET from onsemi, designed for a wide range of power management and switching applications.
Product Features and Performance
80V drain-to-source voltage (Vdss)
4mΩ maximum on-resistance (Rds(on)) at 25A, 10V
25A continuous drain current (Id) at 25°C ambient temperature
198A continuous drain current (Id) at 25°C case temperature
8030pF maximum input capacitance (Ciss) at 40V
3W maximum power dissipation at 25°C ambient temperature
187W maximum power dissipation at 25°C case temperature
Product Advantages
Low on-resistance for efficient power conversion
High current handling capability
Compact 8-PQFN (5x6) package
Wide operating temperature range of -55°C to 175°C
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 80V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2.4mΩ
Continuous Drain Current (Id): 25A (ambient), 198A (case)
Input Capacitance (Ciss): 8030pF
Power Dissipation: 3.3W (ambient), 187W (case)
Quality and Safety Features
RoHS3 compliant
Robust PowerTrench technology for reliable performance
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Telecommunication and industrial equipment
Automotive electronics
Product Lifecycle
Current product, no discontinuation plans
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
High efficiency and reliability
Compact and thermally efficient package
Wide operating temperature range
Compliance with industry standards
FDMS86368Fairchild (onsemi)