Manufacturer Part Number
FDMS86322
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET transistor
Product Features and Performance
80V drain-to-source voltage rating
Ultra-low on-resistance of 7.65mΩ at 13A, 10V
13A continuous drain current at 25°C ambient temperature
60A continuous drain current at 25°C case temperature
High input capacitance of 3000pF at 50V
Maximum power dissipation of 2.5W at 25°C ambient, 104W at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent thermal performance
Compact 8-PQFN (5x6) package
Suitable for high-current, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 80V
Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 7.65mΩ at 13A, 10V
Continuous Drain Current (ID): 13A at 25°C ambient, 60A at 25°C case
Input Capacitance (Ciss): 3000pF at 50V
Power Dissipation: 2.5W at 25°C ambient, 104W at 25°C case
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Compatible with standard MOSFET drivers and control circuits
Application Areas
Switching power supplies
Motor drives
Power management circuits
Automotive electronics
Product Lifecycle
Currently in production
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent thermal performance and high-current capability
Compact package size for space-constrained designs
Suitable for a wide range of high-power applications
Proven reliability and quality from a trusted manufacturer
FDMS86255 MOSFairchild (onsemi)